1 radiation hardened high-speed, dual output pwm hs-1825arh, HS-1825AEH the radiation hardened hs-1 825arh, HS-1825AEH pulse width modulator is designed to be used in high frequency switched-mode power supplies and can be used in either current-mode or voltage-mode. it is well suited for single-ended boost converter applications. device features include a precision voltage reference, low power start-up circuit, high frequency oscillator, wide-band error amplifier, and fast current -limit comparator. the use of proprietary process capabilities and unique design techniques results in fast propagation delay times and high output current over a wide range of output voltages. constructed with the intersil rad hard silicon gate (rsg) dielectric isolation bicmos process, the hs-1825arh, HS-1825AEH has been specifically designed to provide highly reliable performance when exposed to harsh radiation environments. specifications for rad hard qml devices are controlled by the defense logistics agency land and maritime (dla). the smd numbers listed below must be used when ordering. detailed electrical specifications for the hs-1825arh, HS-1825AEH are contained in smd 5962-99558. that document may be easily downloaded from our website. www.intersil.com/ features ? electrically screened to dla smd # 5962-99558 ? qml qualified per mil-prf-38535 requirements ? radiation environment - maximum total dose. . . . . . . . . . . . . . . . . . . . 300 krad(si) - vertical architecture provides low dose rate immunity - di rsg process provides latch-up immunity ? low start-up current . . . . . . . . . . . . . . . . . . . . . . . 100a (typ) ? fast propagation delay . . . . . . . . . . . . . . . . . . . . . . . 80ns (typ) ? 12v to 30v operation ? 1a (peak) dual output drive capability ?5.1v reference ?undervoltage lockout ?programmable soft-start ? switching frequencies to 500khz ? latched overcurrent comparator with full cycle restart ? programmable leading ed ge blanking circuit applications ? current or voltage mode switching power supplies ? motor speed and direction control pin configuration hs-1825arh, HS-1825AEH sbdip (cdip2-t16) and flatpack (cdfp4-f16) top view 14 15 16 9 13 12 11 10 1 2 3 4 5 7 6 8 inv non-inv e/a out clock rt ct soft start ramp vref 5.1v output b vc power gnd output a gnd ilim/sd v cc note: grounding the soft-start pin does not inhibit the outputs. the outputs may be inhibited by applying >1.26v to the ilim/sd pin. caution: these devices are sensitive to electrostatic discharge; follow proper ic handling procedures. 1-888-intersil or 1-888-468-3774 | copyright intersil americas inc. 2002, 2005, 2008, 2012. all rights reserved intersil (and design) is a trademark owned by intersil corporation or one of its subsidiaries. all other trademarks mentioned are the property of their respective owners. may 10, 2012 fn4561.9
hs-1825arh, HS-1825AEH 2 fn4561.9 may 10, 2012 ordering information ordering number internal mkt. number (note) temp. range (c) package (rohs compliant) pkg. dwg. # 5962f9955801v9a hs0-1825arh-q -50 to +125 5962f9955802v9a hs0-1825aeh-q -50 to +125 hs0-1825arh/sample hs0-1825arh/sample -50 to +125 5962f9955801vec hs1-1825arh-q -50 to +125 16 ld sbdip d16.3 5962f9955802vec hs1-1825aeh-q -50 to +125 16 ld sbdip d16.3 5962f9955801qec hs1-1825arh-8 -50 to +125 16 ld sbdip d16.3 5962f9955801vxc hs9-1825arh-q -50 to +125 16 ld flatpack k16.a 5962f9955802vxc hs9-1825aeh-q -50 to +125 16 ld flatpack k16.a 5962f9955801qxc hs9-1825arh-8 -50 to +125 16 ld flatpack k16.a hs1-1825arh/proto hs1-1825arh/proto -50 to +125 16 ld sbdip d16.3 hs9-1825arh/proto hs9-1825arh/proto -50 to +125 16 ld flatpack k16.a note: these intersil pb-free hermetic packaged products employ 100% au plate - e4 termination finish, which is rohs compliant a nd compatible with both snpb and pb-free soldering operations. typical performance curves figure 1. oscillator frequency vs r t and c t figure 2. maximum duty cycle vs r t 110100 10 100 1k 10k r t timing resistance (k ) frequency (khz) c220pf c470pf c1000pf c2200pf c4700pf c10nf c22nf 1 10 100 50 60 70 80 90 100 d max (%) r t timing resistance (k ) d max
hs-1825arh, HS-1825AEH 3 intersil products are manufactured, assembled and tested utilizing iso9000 quality systems as noted in the quality certifications found at www.intersil.com/design/quality intersil products are sold by description only. intersil corporat ion reserves the right to make changes in circuit design, soft ware and/or specifications at any time without notice. accordingly, the reader is cautioned to verify that data sheets are current before placing orders. information furnished by intersil is believed to be accurate and reliable. however, no responsi bility is assumed by intersil or its subsid iaries for its use; nor for any infringem ents of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of i ntersil or its subsidiaries. for information regarding intersil corporation and its products, see www.intersil.com fn4561.9 may 10, 2012 for additional products, see www.intersil.com/product_tree die characteristics die dimensions 4710m x 3570m (185 mils x 140 mils) thickness: 483m 25.4m (19 mils 1 mil) interface materials glassivation type: psg (phosphorous silicon glass) thickness: 8.0k ? 1.0k ? top metallization type: alsicu thickness: 16.0k ? 2k ? substrate radiation hardened silicon gate, dielectric isolation backside finish silicon assembly related information substrate potential unbiased (di) additional information worst case current density <2.0 x 10 5 a/cm 2 transistor count 225 metallization mask layout hs-1825arh,HS-1825AEH notes: 1. this is the oscillator ground (oscgnd) bond pad and must be connected to gnd. 2. pgnd and vc each require two bond pad connections. pgnd (12) outa (11) gnd (10) oscgnd ilim (9) ss (8) ramp (7) ct (6) rt (5) (1) in- (16) v ref (15) v cc (14) outb (13) vc (3) eaout (4) clk/leb (2) in+ vc (13) (12) pgnd (note 2) (note 2) (note 1) (note 2) (note 2)
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